Dependence of Zn diffusion on the Al content in Ga1−xAlxAs |
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| Authors: | C.P. Lee S. Margalit A. Yariv |
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| Affiliation: | California Institute of Technology, Pasadena, CA 91125, U.S.A. |
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| Abstract: | Zn diffusion in Ga1?xAlxAs as a function of Al content has been studied. From the diffusion depth measurements a dependence of the diffusion rate on the Al content has been found and the reason discussed. The use of the GaAs epilayer as a mask for Zn diffusion in Ga1??xAlxAs was demonstrated. |
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