Influence of bandgap narrowing on the performance of silicon n-p solar cells

This paper deals with the incorporation of bandgap narrowing in the modelling of n⁺-p solar cells. First, the physcial model on which the computations are based, is explained. Second, the technology used to fabricate the solar cells, and the measurement technique for the minority carrier lifetime are commented. Then a detailed comparison between measured and computed results of I_sc, V_oc and P_max follows and the importance of inclusion I72 of the bandgap narrowing is illustrated. The theoretical case where Auger—recombination is the only recombination process is also treated. Finally computed results obtained for solar cells with different surface concentrations are shown.