析薄电薄膜J—V曲线温度特性的研究

用准分子激光扫描原位淀积法制备了极薄膜BIT／p-Si(100)和PZT／p-Si(100)，借助于X－射线衍射（XRD）和扫描电镜（SEM）研究了薄膜的显微结构，并对这两种极薄铁电薄膜Au/BIT/p-Si(100)和Au/PZT/p-Si(100)的J－V曲线温度特性进行了拟合分析讨论。模拟分析结果表明，在负温区，电流密度J对温度T有较强的依赖关系，但与通常欧姆电流温度关系不同。而在正温区，服从J＝KV^2关系，ε和SCLC电流密度J则与温度T无关。

The Temperature Characteristic of J-V Curves of the Very Thin Films Au/PZT/p-Si (100)and Au/BIT/p-Si (100)Structure

The very thin films of PZT and BIT were prepared successfully on p silicon wafer using scanning excimer laser.SEM and X ray diffraction methods are used for the analyses of microstructure and the temperature characteristic of J V curves of the very thin films Au/PZT/p Si (100) and Au/BIT/p Si (100) are discussed.The results of the fitting curve show that,in the negative temperature region, J V curves shows the dependence on the relation between current J and temperature T but the J T curve is different from the temperature dependence of ohmic current.And in the positive temperature region,the current J is independent of temperature T ,it should be followed by a second square law region corresponding to space charge limit current (SCLC).