A reliable and manufacturable method to induce a stress of >1 GPa on a P-channel MOSFET in high volume manufacturing |
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Authors: | Arghavani R. Xia L. M'Saad H. Balseanu M. Karunasiri G. Mascarenhas A. Thompson S.E. |
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Affiliation: | Appl. Mater., Santa Clara, CA, USA; |
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Abstract: | This letter discusses a reliable and manufacturable integration technique to induce greater than 1 GPa of stress into a p-channel MOSFET, which will be required to increase the drive current beyond 1 mA//spl mu/m at the sub-90-nm process generation. Uniaxial compressive stress is introduced into the p-channel by both a selective deposition of SiGe in the source/drain and an engineered 2.5-GPa compressively stressed nitride. The highest to date compressively stressed SiN film is obtained by heavy ion bombardment during the deposition of the film. |
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