(AlCrNbSiTiV)N高熵合金氮化薄膜溅镀参数的灰关联分析优化

采用直流反应式磁控溅镀法在硅晶片和住友刀具BN2000上制备(AlCrNbSiTiV)N高熵合金氮化薄膜。通过正交试验考察了溅镀功率、沉积温度、氮氩气流量比和基材偏压对薄膜的摩擦因数、硬度和刀具磨损的影响。对信噪比进行灰关联分析,以实现多目标优化,得出最佳工艺参数为:溅镀功率200 W,沉积温度200°C,氮氩气流量比0.3,基材偏压100 V。该条件下所得薄膜的摩擦因数为0.46,显微硬度为1243.72 HV,刀具磨损最小。

Optimization of sputtering parameters for preparation of (AlCrNbSiTiV)N high-entropy alloy nitride film by grey relation analysis

The high-entropy alloy nitride(AlCrNbSiTiV)N thin films were deposited on silicon wafers and Sumitomo’s BN2000 cutter tools by direct-current reactive magnetron sputtering.The effects of sputtering power,substrate temperature,N2/(N2+Ar)flow rate,and substrate bias on the friction coefficient and microhardness of thin film and the wear of cutter tool were examined by orthogonal test.The optimal process parameters were obtained by grey relational analysis on signal-to-noise ratios for a multi-objective optimization as follows:sputtering power 200 W,substrate temperature 200°C,N2/(N2+Ar)flow rate 0.3,and substrate bias 100 V.The thin film obtained thereunder had a friction coefficient of 0.46,a microhardness of 1243.72 HV,and a minimum flank wear in cutting test.