ian1,LI Bin2,

1,LIN Li1,2(1.CEPREI,Guangzhou 510610,China; 2.Institute of Microelectronics,South China of University Technology,Guangzhou 510640,China)Midgap,CV,charge pumping and dual-transistor charge separation analysis techniques,which can be used to separate the concentrations of radiation-induced oxide-trap and interface-trap charge in MOS transistors,are described in this paper.The principal of charge separation and the advantages and limitations of these methods are analyzed.interface-trap charge;oxide-trap charge;charge separation techniques