Chemical Diffusion in Polycrystalline Al2O3 as Determined from Electrical Conductivity Measurements

By analyzing the changes with time of the electrical conductivity of polycrystalline Al₂O₃ after the O₂ pressure was changed, a defect diffusion coefficient was obtained which was assigned to the Al or O ion, whichever is the faster-diffusing species. Both decreased grain size and MgO addition increase the defect diffusion coefficient. The grain-boundary defect diffusion coefficient for the undoped material was estimated to be: and that for the MgO-doped material was over the range 1100° to 1350°C (δ is the effective thickness of the boundary and s the coefficient of segregation of defects to the boundary region). The mechanism of grain-boundary diffusion is discussed in terms of defect mobility.