The growth of AlInSb by metalorganic chemical vapor deposition

We have grown Al_xIn_1−xSb epitaxial layers by metalorganic chemical vapor deposition using tritertiarybutylaluminum (TTBAl), trimethylindium (TMIn), and triethylantimony (TESb) as sources in a high speed rotating disk reactor. Growth temperatures of 435 to 505°C at 200 Torr were investigated. The V/III ratio was varied from 1.6 to 7.2 and TTBAl/(TTBAl+TMIn) ratios of 0.26 to 0.82 were investigated. Al_xIn_1−xSb compositions from x=0.002 to 0.52 were grown with TTBAl/(TTBAl+TMIn) ratios of 0.62 to 0.82. Under these conditions, no Al was incorporated for TTBAl/(TTBAl+TMIn) ratios less than 0.62. Hall measurements of Al_xIn_1−xSb showed hole concentrations between 5×10¹⁶ cm⁻³ to 2 × 10¹⁷ cm⁻³ and mobilities of 24 to 91 cm²/Vs for not intentionally doped Al_xIn_1−xSb.