Maximum entropy mobility spectrum analysis of HgCdTe heterostructures |
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Authors: | Johan Rothman Jerome Meilhan Gwladys Perrais Jean-Pierre Belle Olivier Gravrand |
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Affiliation: | (1) CEA/LETI-DOPT, 38054 Grenoble, Cedex 9, France |
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Abstract: | We report on mobility spectrum analysis of p-type HgCdTe using a new maximum entropy algorithm termed full MEMSA (f-MEMSA). The algorithm is the first that separates the constraints on the transverse and longitudinal components of the conductivity tensor, which results in a higher resolution, compared to other MEMSA algorithms. Compared to the Lakeshore c-QMSA algorithm, f-MEMSA demonstrated a lower detection limit and smaller errors for estimations on synthetic data sets. f-MEMSA was applied to experimental data measured on p-type Hg0.77Cd0.23Te, measured between T=30 K and 300 K and for an applied magnetic field between μ0H=0 T and 9 T. Despite the demonstrated high performance of f-MEMSA on synthetic data, we observed several nonphysical contributions, such as low mobility electrons and high mobility holes. A systematic study of different sample geometries and growth methods showed that the high mobility holes, so-called mirror peaks, can be attributed to finite contact size effects. It also indicated that the low mobility electrons appear in the mobility spectrum as a consequence of a limitation in the application of mobility spectrum analysis (MSA) to vacancy-doped HgCdTe, which is consistent with a magnetic freezeout of the holes at high magnetic fields. |
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Keywords: | Maximum entropy mobility spectrum analysis (MEMSA) quantative mobility spectrum analysis (QMSA) Hall effect doping mobility HgCdTe spectrum analysis |
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