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Improvement of GaAs/AlGaAs quantum well laser diodes by rapid thermal annealing |
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| Authors: | K Xie C R Wie J A Varriano G W Wicks |
| Affiliation: | (1) Department of Electrical and Computer Engineering and Center for Electronic and Electro-optic Materials, State University of New York at Buffalo, 14260 Buffalo, NY;(2) Institute of Optics, University of Rochester, 14627 Rochester, NY;(3) Physics Department, Christian Brothers University, 38104 Memphis, TN |
| Abstract: | Post-growth annealing is shown to improve the laser diode quality of GaAs/AlGaAs graded-index separate confinement heterostructure quantum well laser diode structures grown at a nonoptimal substrate temperature lower than 680°C by molecular beam epitaxy. Reduction by a factor of up to three in the threshold current was accompanied by a reduction in the interface trap density. The reduced threshold current is still higher than that of laser diodes grown at the optimal temperatures which are between 680 and 695°C. The improvement in laser diode performance is ascribed to the reduction of interface nonradiative recombination centers. |
| Keywords: | GaAs-AlGaAs laser molecular beam epitaxy (MBE) quantum well (QW) rapid thermal annealing (RTA) |
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