| APCVD法制备掺氮二氧化钛薄膜及其性能研究 |
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| 引用本文： | 王薇薇,郭玉,张溪文,韩高荣. APCVD法制备掺氮二氧化钛薄膜及其性能研究[J]. 功能材料与器件学报, 2006, 12(3): 187-191 |
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| 作者姓名： | 王薇薇 郭玉 张溪文 韩高荣 |
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| 作者单位： | 浙江大学,硅材料国家重点实验室,杭州,310027;浙江大学,硅材料国家重点实验室,杭州,310027;浙江大学,硅材料国家重点实验室,杭州,310027;浙江大学,硅材料国家重点实验室,杭州,310027 |
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| 基金项目： | 国家高技术研究发展计划(863计划) , 中国科学院资助项目 |
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| 摘 要： | 采用常压化学气相沉积(APCVD)法,以四氯化钛(TiCl4)、氧气(O2)氨气(NH3)作为先驱体,成功制备了掺氮二氧化钛(TiO2)薄膜.通过对其进行扫描电镜(SEM)、X射线衍射(XRD)、紫外可见透过光谱(UV-VIS)研究后发现,氮掺杂后在二氧化钛薄膜中引入Ti4O7相,抑制了锐钛矿相向金红石相的转变,光吸收限发生红移,相应从365.8nm红移到了402.6nm,提高了薄膜在可见光照射下的光催化效率,并改善了薄膜表面的亲水性能.
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| 关 键 词： | 光催化性 亲水性 掺氮二氧化钛薄膜 常压化学气相沉积 |
| 文章编号： | 1007-4252（2006）03-0187-05 |
| 收稿时间： | 2005-08-26 |
| 修稿时间： | 2005-11-07 |
Preparation and properties of N -doped TiO2 films by APCVD |
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| WANG Wei-wei,GUO Yu,ZHANG Xi-wen,HAN Gao-rong. Preparation and properties of N -doped TiO2 films by APCVD[J]. Journal of Functional Materials and Devices, 2006, 12(3): 187-191 |
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| Authors: | WANG Wei-wei GUO Yu ZHANG Xi-wen HAN Gao-rong |
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| Affiliation: | Department of Materials Science and Engineering, Silicon State Key Lab, Zhejiang University, Hangzhou 310027, China |
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| Abstract: | Using TiCl_4,O_2 and NH_3 as the precursors,N-doped titanium dioxide films were prepared by APCVD.According to the results from SEM,X-ray diffraction(XRD) and the UV-VIS absorption spectrum,it is found that a new phase of Ti_4O_7 is formed in the thin film after nitrogen doping and the crystal transformation from anatase to rutile is inhibited.As well,a red drift of the absorption edge from 365.8nm to 402.6nm exists in the N-doped TiO_2 films and the visible-light induced photocatalysis and hydrophilicity are both enhanced. |
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| Keywords: | photoeatalysis hydrophilicity N - doping TiO2 films APCVD |
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