X波段砷化镓场效应振荡管

X波段GaAs场效应振荡管是一种专门用于各种微波固体振荡电路的新型器件,尤其对X波段GaAsFET电压控制振荡器(VCO)和介质谐振器振荡器(DRO)更为适合。 本文在对有关资料分析的基础上,提出了设计这一器件的基本原则;概述了器件的基本结构;介绍了器件的参数研究结果和电路应用情况。用该器件制作的X波段FET VCO,得到了800MHz以上的电调范围,在整个电调范围内,输出功率为30～50mW,功率起伏小于1.5dB。

X-Band GaAs FET for Oscillators

An X-band GaAs oscillators FET especially designed for use in various microwave solid state oscillatory circuit is more suitable for X-band GaAs FET VCO and DRO FET oscillators.In this paper the basic construction of the device design is described. On the basis of analysing fundamental principles necessary for device design. The results of device parameters and the application of devices to circuits are also given. X-band GaAs FET VCO has been developed with an output power 30-50mW, tuning range greater than 800MHz, and output variation less than 1.5dB.