非晶铟镓锌氧化物薄膜晶体管关键工艺研究

为优化金属氧化物薄膜晶体管（ IGZO-TFT）的特性，采用射频磁控溅射法沉积IGZO薄膜作为半导体活性层，制备出具有刻蚀阻挡层（ Etch stop layer ，ESL）结构的IGZO TFT，在2．5 G试验线上研究了IGZO沉积过程中O2浓度、IGZO沉积后N2 O等离子体处理、ESL的制备温度和ESL沉积过程中N2 O／SiH4的比例等关键工艺条件对IGZO TFT的阈值电压（ Vth ）的影响。实验结果表明：IGZO沉积过程中O2浓度的增加、IGZO沉积后N2 O等离子体处理和ESL制备温度的降低会导致IGZO TFT的Vth正偏移。

Key Process Research of Indium Gallium Zinc Oxide Thin Film Transistor with Etch Stop Layer

In order to improve the performance of Indium Gallium Zinc Oxide Thin Film Transistor , IGZO-TFT with etch-stop layer was prepared in 2 .5 G experimental line .The effects of O 2 concentration during IGZO deposition , N2 O plasma treatment , the temperature of ESL deposition and the N 2 O/SiH4 ratio on the IGZO TFT Vth were systemically studied .The results show that the Vth would shift to positive position as the increasing of O 2 concentration , N2 O plasma treatment , and the decreasing of ESL deposition temperature .