Photosensitivity of thin-film structures based on (CuInSe2)x(2ZnSe)1?x solid solutions

Polycrystalline (CuInSe₂)_x(2ZnSe)_1−x films (x=0.6–1.0) with p-type conductivity and a thickness of 0.5–0.9 μm were obtained by pulsed laser evaporation. It is shown that a chalcopyrite-sphalerite transition occurs in the above system for x=0.7. The obtained films were used to fabricate the photosensitive structure of the In/p-(CuInSe₂)_x(2ZnSe)_1−x and InSe(GaSe)/(CuInSe₂)_x(2ZnSe)_1−x types. Spectral dependences of photovoltaic-conversion quantum efficiency were studied, and the photosensitivity of the structures in relation to the type of energy barrier and the composition was analyzed. It is concluded that the structures under consideration can be used as broadband photovoltaic converters. __________ Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 5, 2000, pp. 576–581. Original Russian Text Copyright ? 2000 by V. Rud’, Yu. Rud’, Bekimbetov, Gremenok, Bodnar’, Rusak.