等离子体增强化学气相沉积设备的研制

本文介绍非晶硅薄膜太阳能电池生产线的核心设备——等离子体增强化学气相沉积(PECVD, Plasma Enhanced Chemical Vapor Deposition)系统,并阐述了其重要地位.非晶硅太阳能电池制造的关键技术是非晶硅薄膜的制备,目前最常见的制备方法是PECVD技术.PECVD技术凭借其低温沉积、可大面积成膜、成膜均匀等特点,在非晶硅薄膜制备方面迅速发展.PECVD系统用于制备非晶硅太阳能电池的关键结构P、I、N硅薄膜层.本文阐述了该设备的结构特点、技术指标、工作原理及工艺过程,对沉积室的结构和配置进行了详细设计计算,非晶硅太阳能电池稳定后的转化效率可达6％.

Development of the plasma enhanced chemical vapor deposition system

The plasma enhanced chemical vapor deposition(PECVD) system was introduced which is the core equipment of amorphous silicon thin film solar cell production line,and its importance was described.The preparation of amorphous silicon thin film is the key technology for manufacturing the amorphous silicon solar cell,and the PECVD is the most common method of preparation.The technology of PECVD is developed rapidly with the advantages of deposition in relatively low temperature,large area and uniform film,etc.The silicon film layer of P,I,N which is the key structure of amorphous silicon solar cell is produced by the PECVD system.The structure characteristics,technology index,working principle and technical process were analyzed.The structure and configuration of deposition chamber were designed and calculated.The conversion efficiency of the amorphous silicon solar cell can reach 6%.