| 基片温度对磁控溅射沉积二氧化硅的影响 |
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| 引用本文： | 熊斌,徐刚,史继富.基片温度对磁控溅射沉积二氧化硅的影响[J].真空,2012,49(2):44-46. |
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| 作者姓名： | 熊斌 徐刚 史继富 |
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| 作者单位： | 1. 中国科学院广州能源研究所,广东广州510640;中国科学院可再生能源与天然气水合物重点实验室,广东广州510640;中国科学院研究生院,北京100039
2. 中国科学院广州能源研究所,广东广州510640;中国科学院可再生能源与天然气水合物重点实验室,广东广州510640 |
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| 基金项目： | 国家自然基金(50876108);广东省战略性新兴产业核心技术攻关(2011A032304003) |
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| 摘 要： | 本文详细地研究了基片温度对磁控溅射沉积二氧化硅的影响,随着基片温度的增加,溅射沉积速率下降明显,薄膜的折射率也出现上升趋势,薄膜也由低温时的疏松粗糙发展为致密光滑.250℃时的溅射沉积速率仅为室温时的1/3,由此,针对间歇式在大面积玻璃上沉积二氧化硅薄膜,我们采取了沉积完ITO薄膜后,先快速降温,再沉积二氧化硅的工艺.
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| 关 键 词： | 基片温度 沉积速率 折射率 |
Effect of substrate temperature on SiO2 deposition by magnetron sputtering |
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| XIONG Bin
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XU Gang
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SHI Ji-fu.Effect of substrate temperature on SiO2 deposition by magnetron sputtering[J].Vacuum,2012,49(2):44-46. |
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| Authors: | XIONG Bin XU Gang SHI Ji-fu |
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| Affiliation: | 1,2 (1.Guangzhou Institute of Energy Conversion,Chinese Academy of Sciences,Guangzhou 510640,China; 2.Key Lab of Renewable Energy Conversion,Chinese Academy of Sciences,Guangzhou 510640,China; 3.Graduate School of Chinese Academy of Science,Beijing 100039,China) |
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| Abstract: | Effect of substrate temperature on SiO2 deposition by magnetron sputtering was investigated in this paper.With the increase of substrate temperature,the deposition rate decreases significantly,but the refractive index of SiO2 film increases and the film becomes compact and smooth.The deposition rate at 250℃ is only 1/3 of that at room temperature.Thus,for intermittently depositing SiO2 film on large-area glass,we adopt the process of quickly reducing the temperature after ITO film deposition,and then depositing SiO2. |
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| Keywords: | substrate temperature deposition rate refractive index |
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