Electrical and structural properties of double metal structure Ni/V Schottky contacts on n-InP after rapid thermal process |
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Authors: | S Sankar Naik V Rajagopal Reddy Chel-Jong Choi and Jong-Seong Bae |
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Affiliation: | (1) Department of Physics, Sri Venkateswara University, Tirupati, 517502, India;(2) School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju, 561-756, Korea;(3) Busan Center, Korea Basic Science Institute (KBSI), Busan, 609-735, Korea; |
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Abstract: | The electrical, structural, and surface morphological properties of Ni/V Schottky contacts have been investigated as a function
of annealing. The Schottky barrier height value from I–V and C–V measurements for as-deposited Ni/V/n-InP diode is 0.61 eV (I–V) and 0.91 eV (C–V), respectively. It has been observed that the Schottky barrier height decreases with increasing annealing temperature as
compared to the as-deposited contact. For the contact annealed at 200 °C, the obtained barrier height decreased to 0.52 eV
(I–V) and 0.78 eV (C–V). Further, the annealing temperature increased to 300 and 400 °C, the barrier height slightly increased to 0.58 eV (I–V), 0.82 eV (C–V) and 0.59 eV (I–V), 0.88 eV (C–V). However, after annealing at 500 °C, results then decrease in barrier height to 0.51 eV (I–V) and 0.76 eV (C–V), which is lower than the value obtained for the sample annealed at 200 °C. The Norde method is also employed to extract
the barrier height of Ni/V/InP Schottky diode, and the values are 0.68 eV for the as-deposited and 0.56 eV for the contact
annealed at 500 °C, which are in good agreement with those obtained by I–V technique. Based on the results of AES and XRD studies, it is concluded that the formation of indium phases at the Ni/V/n-InP interface may be the reason for the increase in the barrier height for the as-deposited contact. The decrease in the
barrier height upon annealing at 500 °C may be due to the formation of phosphide phases at the interface. The AFM results
showed that there is no significant degradation in the surface morphology (RMS roughness of 0.61 nm) of the contact even after
annealing at 500 °C. |
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