| 3～6GHz SiGe HBT Cascode低噪声放大器的设计 |
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| 引用本文： | 丁春宝,张万荣,谢红云,沈珮,陈亮,尤云霞,孙博韬,王任卿.3～6GHz SiGe HBT Cascode低噪声放大器的设计[J].北京工业大学学报,2012,38(8):1162-1166. |
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| 作者姓名： | 丁春宝 张万荣 谢红云 沈珮 陈亮 尤云霞 孙博韬 王任卿 |
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| 作者单位： | 1.北京工业大学 电子信息与控制工程学院, 北京 100124 |
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| 基金项目： | 国家自然科学基金资助项目，北京市自然科学基金资助项目 |
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| 摘 要： | 基于Jazz 0.35μm SiGe工艺设计一款满足UWB和IEEE802.11a标准的低噪声放大器.采用并联电感峰化技术与Cascode结构来展宽带宽;完成了芯片版图的设计,芯片面积为1.16 mm×0.78 mm;在带宽为3~6 GHz范围内,最大增益为26.9 dB,增益平坦度为±0.9 dB.放大器的输入输出匹配良好,其回波损耗S11和S22均小于-10dB,输入与输出驻波比小于1.5,1 dB压缩点为-22.9 dBm.在整个频段内,放大器无条件稳定.
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| 关 键 词： | 低噪声放大器 SiGe异质结双极晶体管 达林顿对 |
| 收稿时间： | 2010-06-11 |
Design of 3 -6 GHz SiGe HBT Cascode Low Noise Amplifier |
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| DING Chun-bao,ZHANG Wan-rong,XIE Hong-yun,SHEN Pei,CHEN Liang, YOU Yun-xia,SUN Bo-tao,WANG Ren-qing.Design of 3 -6 GHz SiGe HBT Cascode Low Noise Amplifier[J].Journal of Beijing Polytechnic University,2012,38(8):1162-1166. |
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| Authors: | DING Chun-bao ZHANG Wan-rong XIE Hong-yun SHEN Pei CHEN Liang YOU Yun-xia SUN Bo-tao WANG Ren-qing |
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| Affiliation: | 1.School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China |
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| Abstract: | Based on Jazz 0.35 μm SiGe process,a SiGe HBT low-noise amplifier(LNA) for UWB and IEEE 802.11a application is presented.The technology of inductive shunt peaking and cascade configuration is adopted to enhance the bandwidth.Finally,the chip layout is designed with its area 1.16×0.78 mm2.For the range of 3-6 GHz bandwidth,the maximum power gain is 26.9 dB,and gain flatness is ±0.9 dB.The input and output match well,input and output reflections(S11 and S22) are both less than-10 dB,the input VSWR and output VSWR are both less than 1.5,and the 1 dB compression point is-22.9 dBm.The LNA is unconditionally stable in the whole band. |
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| Keywords: | low noise amplifier SiGe heterojunction bipolar transistor Darlington pair |
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