| Sputtering of ZnO
buffer layer on Si for GaN blue
light emitting materials |
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| 作者姓名： | 贺洪波 范正修 姚振钰 汤兆胜 |
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| 作者单位： | HE Hongbo,FAN Zhengxiu,TANG Zhaosheng(Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China);YAO Zhenyu(Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China)
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| 摘 要： | The preparation of high quality ZnO/Si substrates for the growth of GaN blue light emitting materials is considered. ZnO thin films have been deposited on Si (100) and Si (111) substrates by conventional magnetron sputtering. Morphology, crystallinity and c-axis preferred orientation of ZnO thin films have been investigated by transmitting electron microscopy (TEM), X-ray diffraction (XRD) and X-ray rocking curve (XRC). It is proved that the ZnO thin films have perfect structure. The full-width-at-half-maximum (FWHM) of the ZnO(002) XRC of these films is about 1°, while the minimum is 0.353°. This result is better than the minimum FWHM (about 2°) reported by other research groups. Moreover, comparison and discussion are given on film structure of ZnO/Si(100) and ZnO/Si(111).
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| 收稿时间： | 16 January 2006 |
The passive measurements of object’s directional emissivity in laboratory |
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| Xiru?Xu,Liangfu?Chen,Jiali?Zhuang.Sputtering of ZnO
buffer layer on Si for GaN blue
light emitting materials[J].Science in China(Technological Sciences),2000,43(1):55-59. |
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| Authors: | Xiru Xu Liangfu Chen Jiali Zhuang |
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| Affiliation: | 1. Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
2. Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | The preparation of high quality ZnO/Si substrates for the growth of GaN blue light emitting materials is considered. ZnO thin films have been deposited on Si(100) and Si(111) substrates by conventional magnetron sputtering. Morphology, crystallinity and c-axis preferred orientation of ZnO thin films have been investigated by transmitting electron microscopy (TEM), X-ray diffraction (XRD) and X-ray rocking curve (XRC). It is proved that the ZnO thin films have perfect structure. The full-width-at-half-maximum (FWHM) of the ZnO(002) XRC of these films is about 1°, while the minimum is 0.353°. This result is better than the minimum FWHM (about 2°) reported by other research groups. Moreover, comparison and discussion are given on film structure of ZnO/Si(100) and ZnO/Si(111) |
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| Keywords: | light emitting material ZnO magnetron sputtering structure X-ray rocking curve |
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