| 一种改善功率VDMOS单粒子栅穿的新结构研究 |
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| 引用本文： | 唐昭焕,胡刚毅,陈光炳,谭开洲,刘勇,罗俊,徐学良. 一种改善功率VDMOS单粒子栅穿的新结构研究[J]. 半导体学报, 2012, 33(4): 044002-4 |
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| 作者姓名： | 唐昭焕 胡刚毅 陈光炳 谭开洲 刘勇 罗俊 徐学良 |
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| 作者单位： | 模拟集成电路重点实验室 |
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| 基金项目： | 预先研究项目（No.51311050202） |
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| 摘 要： | 本文分析了VDMOS器件在空间辐照环境中的单粒子栅穿机理，并基于这种机理提出了一种可以有效改善VDMOS器件单粒子栅穿的新结构。从理论上分析了该结构在改善VDMOS单粒子栅穿效应中的作用，仿真验证该结构可以提高SEGR阈值约120%，该结构在保证VDMOS器件击穿电压保持不变的前提下，可以降低VDMOS的比导通电阻约15.5%，同时该新结构仅需要在原VDMOS器件版图的基础上使用有源区的反版来代替有源区版，应用LOCOS技术实现厚氧化层来提高SEGR阈值，工艺可加工性较强。该新结构特别适用于对辐照环境中高压VDMOS器件的研制。
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| 关 键 词： | VDMOS器件 器件结构 空间辐射环境 结构模拟 阈值电压 击穿电压 单事件 N沟道 |
A novel structure for improving the SEGR of a VDMOS |
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| Tang Zhaohuan,Hu Gangyi,Chen Guangbing,Tan Kaizhou,Liu Yong,Luo Jun and Xu Xueliang. A novel structure for improving the SEGR of a VDMOS[J]. Chinese Journal of Semiconductors, 2012, 33(4): 044002-4 |
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| Authors: | Tang Zhaohuan Hu Gangyi Chen Guangbing Tan Kaizhou Liu Yong Luo Jun Xu Xueliang |
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| Affiliation: | Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China;Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China; Sichuan Institute of Solid-State Circuits, China Electronics Technology Group Corporation, Chongqing 400060, China;Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China;Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China;Sichuan Institute of Solid-State Circuits, China Electronics Technology Group Corporation, Chongqing 400060, China;Sichuan Institute of Solid-State Circuits, China Electronics Technology Group Corporation, Chongqing 400060, China;Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China; Sichuan Institute of Solid-State Circuits, China Electronics Technology Group Corporation, Chongqing 400060, China |
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| Abstract: | The mechanism of single-event gate-rupture in an N-channel VDMOS in a space radiation environment was analyzed. Based on the mechanism, a novel structure of VDMOS for improving single-event gate-rupture is proposed, and the structure is simulated and it is demonstrated that it can improve a VDMOS SEGR threshold voltage by 120%. With this structure, the specific on-resistance value of a VDMOS is reduced by 15.5% as the breakdown voltage almost maintains the same value. As only one mask added, which is local oxidation of silicon instead of an active processing area, the new structure VDMOS it is easily fabricated. The novel structure can be widely used in high-voltage VDMOS in a space radiation environment. |
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| Keywords: | VDMOS single event gate-rupture local oxidation of silicon specific on-resistance |
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