| 沟道电势分布对静电感应晶闸管瞬态特性的影响 |
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| 引用本文： | 刘春娟,刘肃,白雅洁.沟道电势分布对静电感应晶闸管瞬态特性的影响[J].半导体学报,2012,33(4):044009-6. |
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| 作者姓名： | 刘春娟 刘肃 白雅洁 |
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| 作者单位： | 兰州大学,兰州大学 |
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| 基金项目： | The Scientific and Technological Supporting Program of Gansu Province,China |
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| 摘 要： | 本论文从理论和实验上研究了由几何参数与偏置电压决定的沟道电势分布对静电感应晶闸管(SITH)瞬态性能的影响。从理论上推导出了SITH势垒高度和I-V特性的数学表达式。论文深入研究了影响器件在阻断态和导通态瞬态性能的主要因素和机理。研究结果对SITH的设计、制造、性能优化和应用有一定的指导意义。
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| 关 键 词： | 静电感应晶闸管 势垒分布 瞬态性能 阻断态 导通态 |
Dependence of transient performance on potential distribution in a static induction thyristor channel |
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| Liu Chunjuan,Liu Su and Bai Yajie.Dependence of transient performance on potential distribution in a static induction thyristor channel[J].Chinese Journal of Semiconductors,2012,33(4):044009-6. |
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| Authors: | Liu Chunjuan Liu Su and Bai Yajie |
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| Affiliation: | Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China;Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China;Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China |
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| Abstract: | The impact of potential barrier distribution on the transient performance of a static induction thyristor (SITH) in a channel determined by geometrical parameters and applied bias voltage is studied theoretically and experimentally. The analytical expressions of potential barrier height and the I-V characteristics of the SITH are also derived. The main factors that influence the transient performance of the SITH between the blocking and conducting states, as well as the mechanism underlying the transient process, is thoroughly investigated. This is useful in designing, fabricating, optimizing and applying SITHs properly. |
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| Keywords: | static induction thyristor potential barrier transient performance blocking state conducting state |
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