| 新型碱性阻挡层抛光液对铜布线化学机械平坦化的评估研究 |
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| 引用本文： | 王辰伟,刘玉岭,牛新环,田建颖,高宝红,张晓强. 新型碱性阻挡层抛光液对铜布线化学机械平坦化的评估研究[J]. 半导体学报, 2012, 33(4): 046001-4 |
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| 作者姓名： | 王辰伟 刘玉岭 牛新环 田建颖 高宝红 张晓强 |
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| 作者单位： | 河北工业大学微电子所,河北工业大学微电子所,河北工业大学微电子所,石药集团中奇制药技术(石家庄)有限公司,河北工业大学微电子所,河北工业大学微电子所 |
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| 基金项目： | 02国家重大专项项目(2009ZX02308)，河北省教育厅基金(2011128) ,天津市自然科学基金（10JCZDJC15500)，国家自然科学基金（(10676008)， |
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| 摘 要： | 化学机械平坦化(CMP)是铜互连制备过程中唯一的全局平坦化技术。但是由于互连线铜与扩散阻挡层物理及化学性质上的差异，在阻挡层的化学机械平坦化过程中将加剧导致碟形坑的产生。目前，国际上抛光液以酸性为主，但是其存在固有的问题，如酸性气体挥发，腐蚀严重等。本论文研发出一种新型碱性阻挡层抛光液，与商用的阻挡层抛光液做对比，评估了其抛光性能。实验结果表明，新型碱性阻挡层抛光液抛光后表面状态好，粗糙度较低。另外，碟形坑及电阻测试结果表明，新型碱性阻挡层抛光后铜布线的表面形貌好，碟形坑小，能够应用于铜布线阻挡层的CMP中。
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| 关 键 词： | 化学机械平坦化 晶圆 图案 屏障 碱性 商业发展 化学机械研磨 胶体二氧化硅 |
| 收稿时间： | 2011-09-28 |
An advanced alkaline slurry for barrier chemical mechanical planarization on patterned wafers |
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| Wang Chenwei,Liu Yuling,Niu Xinhuan,Tian Jianying,Gao Baohong and Zhang Xiaoqiang. An advanced alkaline slurry for barrier chemical mechanical planarization on patterned wafers[J]. Chinese Journal of Semiconductors, 2012, 33(4): 046001-4 |
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| Authors: | Wang Chenwei Liu Yuling Niu Xinhuan Tian Jianying Gao Baohong Zhang Xiaoqiang |
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| Affiliation: | Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China;Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China;Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China;Market Information Department of CSPC Zhongqi Pharmaceutical Technology (Shijiazhuang) Co., Ltd, Shijiazhuang 050051, China;Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China;Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China |
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| Abstract: | We have developed an alkaline barrier slurry (named FA/O slurry) for barrier removal and evaluated its chemical mechanical planarization (CMP) performance through comparison with a commercially developed barrier slurry. The FA/O slurry consists of colloidal silica, which is a complexing and an oxidizing agent, and does not have any inhibitors. It was found that the surface roughness of copper blanket wafers polished by the FA/O slurry was lower than the commercial barrier slurry, demonstrating that it leads to a better surface quality. In addition, the dishing and electrical tests also showed that the patterned wafers have a lower dishing value and sheet resistance as compared to the commercial barrier slurry. By comparison, the FA/O slurry demonstrates good planarization performance and can be used for barrier CMP. |
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| Keywords: | barrier CMP alkaline barrier slurry surface roughness dishing |
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