| Cu/Ta/SiO_2/Si多层结构的纳米压痕研究 |
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| 引用本文： | 张昕,卢茜,吴子景,吴晓京,Shen Weidian,Jiang Bin.Cu/Ta/SiO_2/Si多层结构的纳米压痕研究[J].半导体学报,2012,33(4):043002-6. |
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| 作者姓名： | 张昕 卢茜 吴子景 吴晓京 Shen Weidian Jiang Bin |
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| 作者单位： | 复旦大学,复旦大学,复旦大学,复旦大学 |
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| 基金项目： | Project supported by the Science and Technology Commission of Shanghai Municipality, China （No. 0552nm049） and the Shanghai Leading Academic Discipline Project, China （No. B 113）. |
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| 摘 要： | 利用磁控溅射方法在Si衬底上沉积钽层以及铜层，并利用纳米压痕技术对Cu/Ta/SiO_2/Si多层膜结构进行了硬度和弹性模量的表征，研究发现多层膜结构的硬度随着薄膜厚度的增加而降低，然而弹性模量与膜厚之间并没有这样的关系。利用聚焦离子束（FIB）工艺将纳米压痕区域剖开，并通过透射电子显微镜（TEM）表征发现在纳米压痕过后，钽以及二氧化硅界面有了明显的分层现象，这一点表明层与层之间较弱的键合在相对大的负荷下遭到了破坏。
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| 关 键 词： | 纳米压痕 多层系统 磁控溅射工艺 弹性模量 薄膜厚度 聚焦离子束 TEM分析 Si02 |
| 收稿时间： | 9/23/2011 9:48:49 AM |
Nanoindentation study of a Cu/Ta/SiO2/Si multilayer system |
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| Zhang Xin,Lu Qian,Wu Zijing,Wu Xiaojing,Shen Weidian and Jiang Bin.Nanoindentation study of a Cu/Ta/SiO2/Si multilayer system[J].Chinese Journal of Semiconductors,2012,33(4):043002-6. |
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| Authors: | Zhang Xin Lu Qian Wu Zijing Wu Xiaojing Shen Weidian and Jiang Bin |
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| Affiliation: | Department of Materials Science, Fudan University, Shanghai 200433, China;Department of Materials Science, Fudan University, Shanghai 200433, China;Department of Materials Science, Fudan University, Shanghai 200433, China;Department of Materials Science, Fudan University, Shanghai 200433, China; Micro-Nanoelectronics Platform, Fudan University, Shanghai 200433, China;Department of Physics and Astronomy, Eastern Michigan University, Ypsilanti, MI 48197, USA;Shanghai Integrated Circuit R & D Center, Shanghai 201203, China |
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| Abstract: | Tantalum and copper layers were deposited on a thermally oxidized Si substrate in a magnetron sputtering process. Nanoindentation was adopted to investigate the hardness and elastic modulus of the Cu/Ta/SiO2/Si multilayer system. The hardness shows an apparent dependence on the film thickness, and decreases with the increase of film thickness, whereas the elastic modulus does not. To reveal the structural change, a trench through the center of a residual indent was cut by a focused ion beam, and then examined using an ion-microscope. TEM analysis showed that delamination occurs at the interface between the Ta and the SiO2 layer of the residual indent, suggesting that the destruction under a relatively large load is due to weak bonding. |
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| Keywords: | copper tantalum nanoindentation hardness elastic modulus |
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