| 利用电子束曝光系统制作高深宽比图形的研究 |
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| 引用本文： | 黄秀荪,韩立,顾文琪. 利用电子束曝光系统制作高深宽比图形的研究[J]. 传感器与微系统, 2004, 23(11): 30-31,37 |
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| 作者姓名： | 黄秀荪 韩立 顾文琪 |
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| 作者单位： | 中国科学院,电工研究所,北京,100080 |
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| 摘 要： | 为了加工具有高深宽比的器件,采用能量连续递减近似模型,运用蒙特卡罗方法分析高能电子束曝光领域的电子散射轨迹及背散射电子对曝光分辨力的影响,探讨了制作高深宽比图形的工艺条件。计算机模拟结果与实验结果吻合得很好,表明在其它实验条件不变的情况下,较高的加速电压能提高图形的高深宽比,提供了制作高深宽比图形的一种方法。
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| 关 键 词： | 蒙特卡罗方法 电子束曝光 散射 高深宽比图形 |
| 文章编号： | 1000-9787(2004)11-0030-02 |
Research of figures with high aspect ratio made by electron beam lithography system |
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| HUANG Xiu-sun,HAN Li,GU Wen-qi. Research of figures with high aspect ratio made by electron beam lithography system[J]. Transducer and Microsystem Technology, 2004, 23(11): 30-31,37 |
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| Authors: | HUANG Xiu-sun HAN Li GU Wen-qi |
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| Abstract: | In order to make device with high aspect ratio,the Monte Carlo method using a continuous-slowing-down approximation model is applied to estimate the trajectory of electrons and the effect of back scattered electrons on e-beam lithography resolution,in the field of high energy e-beam lithography and study the process for high aspect ratio structures.The computer simulation results show good agreement with the experiments,which means that under the same experimental conditions,a higher accelerating voltage can improve the aspect ratio of the resist profile,and provide a way to acquire high aspect ratio figures. |
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| Keywords: | Monte Carlo method electron beam lithography scatter high aspect ratio figure |
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