| 基于ADS的X波段低噪声放大器的设计与仿真 |
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| 引用本文： | 刘喜明. 基于ADS的X波段低噪声放大器的设计与仿真[J]. 现代电子技术, 2008, 31(19) |
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| 作者姓名： | 刘喜明 |
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| 作者单位： | 上海交通大学,上海,200030;中航雷达与电子设备研究院,江苏,无锡,214063 |
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| 摘 要： | 主要介绍了低噪声放大器的设计理论及用Agilent公司的ADS仿真软件进行X波段低噪声放大器的设计和仿真。在设计的过程中选择了NEC公司的HEMT管NE3210S01,HEMT管与FET相比较,其噪声系数更低,增益和工作频率更高。进行阻抗匹配采用的拓扑结构是并联导纳式结构,即利用串联微带传输线进行导纳变换,然后并联一个微带分支线,微带线的终端开路(或短路),用其输入导纳作为补偿电纳,以达到电路匹配。最后给出了仿真结果、版图设计及实测结果。
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| 关 键 词： | 噪声系数 S参数 低噪声放大器 ADS 匹配网络 |
Design and Simulation X- band Low Noise Amplifier with ADS |
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| LIU Ximing. Design and Simulation X- band Low Noise Amplifier with ADS[J]. Modern Electronic Technique, 2008, 31(19) |
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| Authors: | LIU Ximing |
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| Abstract: | The theory of designing a LNA,X-band LNA with Agilent ADS are ineroduced.Selecting the HEMT NE3210S01 of NEC Company.Comparing with HEMT and FET,its noise figure is much lower,gain and working frequency are much higher.The topology structure of match network is parallel connection admittance structure,namely using stripline to make admittance transformation,then merge a stripline branch line,the terminal of the stripline is open circuit(or short circuit),using input admittance as expiation of electricity admittance attains electric circuit.At last,offering the simulation results,the layout and the measured results. |
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| Keywords: | NF S-parameter low noise amplifier ADS match network |
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