| 基于CMOS工艺的低噪声、高增益混频器 |
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| 引用本文： | 吕瑛,康星朝.基于CMOS工艺的低噪声、高增益混频器[J].黑龙江电子技术,2013(11):144-146,149. |
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| 作者姓名： | 吕瑛 康星朝 |
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| 作者单位： | [1]西北工业大学明德学院电子信息工程系,西安710000 [2]中国通信建设第二工程局有限公司,西安710000 |
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| 摘 要： | 基于TSMC 0.18μm CMOS工艺,设计了一种低噪声、高增益的混频器.通过在吉尔伯特单元中的跨导级处引入噪声抵消技术以降低混频器的噪声;并且在开关管的源级增加电流注入电路的基础上并联一个电容与开关管共源节点处的寄生电容谐振,进一步降低混频器的噪声,增大电路的增益.仿真结果表明,在本振（LO）频率为2.395 GHz,射频（RF）频率为2.4GHz时,混频器的增益为14.2dB,双边带噪声系数为5.9dB,输入三阶交调点为-3.2dBm.混频器工作电压1.8V,直流电流为8mA.
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| 关 键 词： | CMOS混频器 电流注入 噪声抵消 高增益 |
A low-noise and high-gain mixer based on CMOS technology |
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| Authors: | LV Ying KANG Xing-chao |
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| Affiliation: | 2 ( 1. Department of Electronic Information Engineering, MingDe College, Northwestern Polytechnical University, Xi＇ an 710000, China; 2. China Telecommunication Construction 2 nd Engineering Co. , Ltd. Xi＇ an 710000, China) |
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| Abstract: | Based on TSMC 0.18μm CMOS technology,a low-noise and high-gain mixer is designed.The mixer has a Gilbert cell configuration that employs low-noise transconductors designed using noisecancelling technique.An inductance is also inserted at the common source node of switching transistors to eliminate the parasitic capacitance on the basis of using the current-bleeding technique,so that a high gain and a lower noise can be achieved.The simulation results indicate that the mixer has a conversion gain of 14.2dB,a double-sideband noise figure of5.9dB,a third-order intermodulation intercept point of -3.2dBm with a consumption of 8mA at 1.8V when the local-oscillator （LO） frequency is 2.395GHz and the radio-frequency frequency is 2.4GHz. |
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| Keywords: | CMOS mixer current bleeding noise cancellation high gain |
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