Negative bias temperature instability induced single event transient pulse narrowing and broadening

The effect of negative bias temperature instability(NBTI)on a single event transient(SET)has been studied in a 130 nm bulk silicon CMOS process based on 3D TCAD device simulations.The investigation shows that NBTIcan result in the pulse width and amplitude of SET narrowing when the heavy ion hits the PMOS in the high-inputinverter;but NBTI Can result in the pulse width and amplitude of SET broadening when the heavy ion hits the NMOSin the low-input inverter.Based on this study,for the first time we propose that the impact ofNBTI on a SET producedby the heavy ion hitting the NMOS has already been a significant reliability issue and should be of wide concern,and the radiation hardened design must consider the impact of NBTI on a SET.