Deep submicron PDSOI thermal resistance extraction |
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Authors: | Bu Jianhui Bi Jinshun Xi Linmao Han Zhengsheng |
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Affiliation: | Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China |
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Abstract: | Deep submicron partially depleted silicon on insulator (PDSOI) MOSFETs with H-gate were fabricated based on the 0.35μm SOI process developed by the Institute of Microelectronics of the Chinese Academy of Sciences. Because the self-heating effect (SHE) has a great influence on SOI, extractions of thermal resistance were done for accurate circuit simulation by using the body-source diode as a thermometer. The results show that the thermal resistance in an SOI NMOSFET is lower than that in an SOI PMOSFET; and the thermal resistance in an SOI NMOSFET with a long channel is lower than that with a short channel. This offers a great help to SHE modeling and parameter extraction. |
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Keywords: | thermal resistance self heating effect PDSOI |
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