Fabrication and characterization of an AlGaN/PZT detector

Design,fabrication and characterization of a novel two-color detector for ultraviolet and infrared applications are reported.The detector has a simple multilayer structure composed of n-Al0.3Gao07N/i-GaN/p-GaN/SiO2/LaNiO3/PZT/Pt fabricated on a sapphire substrate.Ultraviolet and infrared properties are measured.For the ultraviolet region,a flat band spectral response is achieved in the 302-363 ran band.The detector displays an unbiased responsivity of 0.064 AAV at 355 nm.The current-voltage curve shows that current at zero bias is -1.57 × 10-12 A.This led to a detectivity of 1.81 × 1011 cm · Hz 1/2AV.In the infrared region,the detectivity of the detector is 1.58x 105cm·Hz1/2AV at μm.