Effect of trapped charge accumulation on the retention of charge trapping memory |
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| Authors: | Jin Rui Liu Xiaoyan Du Gang Kang Jinfeng Han Ruqi |
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| Affiliation: | Institute of Microelectronics, Peking University, Beijing, 100871,China |
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| Abstract: | The accumulation process of trapped charges in a TANOS cell during P/E cycling is investigated via numerical simulation.The recombination process between trapped charges is an important issue on the retention of charge trapping memory.Our results show that accumulated trapped holes during P/E cycling can have an influence on retention,and the recombination mechanism between trapped charges should be taken into account when evaluating the retention capability of TANOS. |
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| Keywords: | charge accumulation charge trapping memory retention characteristic |
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