Effect of trapped charge accumulation on the retention of charge trapping memory |
| |
| Jin Rui, Liu Xiaoyan, Du Gang, Kang Jinfeng, Han Ruqi. Effect of trapped charge accumulation on the retention of charge trapping memory[J]. Journal of Semiconductors, 2010, 31(12): 124016. doi: 10.1088/1674-4926/31/12/124016 Jin R, Liu X Y, Du G, Kang J F, Han R Q. Effect of trapped charge accumulation on the retention of charge trapping memory[J]. J. Semicond., 2010, 31(12): 124016. doi: 10.1088/1674-4926/31/12/124016.Export: BibTex EndNote |
| |
| Authors: | Jin Rui Liu Xiaoyan Du Gang Kang Jinfeng Han Ruqi |
| |
| Affiliation: | Institute of Microelectronics, Peking University, Beijing, 100871, China;Institute of Microelectronics, Peking University, Beijing, 100871, China;Institute of Microelectronics, Peking University, Beijing, 100871, China;Institute of Microelectronics, Peking University, Beijing, 100871, China;Institute of Microelectronics, Peking University, Beijing, 100871, China |
| |
| Abstract: | The accumulation process of trapped charges in a TANOS cell during P/E cycling is investigated via numerical simulation.The recombination process between trapped charges is an important issue on the retention of charge trapping memory.Our results show that accumulated trapped holes during P/E cycling can have an influence on retention,and the recombination mechanism between trapped charges should be taken into account when evaluating the retention capability of TANOS. |
| |
| Keywords: | charge accumulation charge trapping memory retention characteristic |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
