Novel multi-bit non-uniform channel charge trapping memory device with virtual-source NAND flash array |
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| Gu Haiming, Pan Liyang, Zhu Peng, Wu Dong, Zhang Zhigang, Xu Jun. Novel multi-bit non-uniform channel charge trapping memory device with virtual-source NAND flash array[J]. Journal of Semiconductors, 2010, 31(10): 104009. doi: 10.1088/1674-4926/31/10/104009 Gu H M, Pan L Y, Zhu P, Wu D, Zhang Z G, Xu J. Novel multi-bit non-uniform channel charge trapping memory device with virtual-source NAND flash array[J]. J. Semicond., 2010, 31(10): 104009. doi: 10.1088/1674-4926/31/10/104009.Export: BibTex EndNote |
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| Authors: | Gu Haiming Pan Liyang Zhu Peng Wu Dong Zhang Zhigang Xu Jun |
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| Affiliation: | Institute of Microelectronics, Tsinghua University, Beijing 100084, China;Institute of Microelectronics, Tsinghua University, Beijing 100084, China;Institute of Microelectronics, Tsinghua University, Beijing 100084, China;Institute of Microelectronics, Tsinghua University, Beijing 100084, China;Institute of Microelectronics, Tsinghua University, Beijing 100084, China;Institute of Microelectronics, Tsinghua University, Beijing 100084, China |
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| Abstract: | In order to overcome the bit-to-bit interference of the traditional multi-level NAND type device, this paper firstly proposes a novel multi-bit non-uniform channel charge trapping memory (NUC-CTM) device with virtual-source NAND-type array architecture, which can effectively restrain the second-bit effect (SBE) and provide 3-bit per cell capability. Owing to the n- buffer region, the SBE induced threshold voltage window shift can be reduced to less than 400 mV and the minimum threshold voltage window between neighboring levels is larger than 750 mV for reliable 3-bit operation. A silicon-rich SiON is also investigated as a trapping layer to improve the retention reliability of the NUC-CTM. |
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| Keywords: | multi-bit storage non-uniform channel charge trapping memory NAND array SiON layer |
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