Intrinsic stability of an HBT based on a small signal equivalent circuit model |
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| Chen Yanhu, Shen Huajun, Liu Xinyu, Li Huijun, Xu Hui, Li Ling. Intrinsic stability of an HBT based on a small signal equivalent circuit model[J]. Journal of Semiconductors, 2010, 31(12): 124010. doi: 10.1088/1674-4926/31/12/124010 Chen Y H, Shen H J, Liu X Y, Li H J, Xu H, Li L. Intrinsic stability of an HBT based on a small signal equivalent circuit model[J]. J. Semicond., 2010, 31(12): 124010. doi: 10.1088/1674-4926/31/12/124010.Export: BibTex EndNote |
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| Authors: | Chen Yanhu Shen Huajun Liu Xinyu Li Huijun Xu Hui Li Ling |
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| Affiliation: | School of Information Science and Engineering, Shandong University, Jinan 250100, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;School of Information Science and Engineering, Shandong University, Jinan 250100, China;School of Information Science and Engineering, Shandong University, Jinan 250100, China;School of Information Science and Engineering, Shandong University, Jinan 250100, China |
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| Abstract: | Intrinsic stability of the heterojunction bipolar transistor (HBT) was analyzed and discussed based on a small signal equivalent circuit model.The stability factor of the HBT device was derived based on a compact T-type small signal equivalent circuit model of the HBT.The effect of the mainly small signal model parameters of the HBT on the stability of the HBT was thoroughly examined.The discipline of parameter optimum to improve the intrinsic stability of the HBT was achieved.The theoretic analysis results of the stability were also used to explain the experimental results of the stability of the HBT and they were verified by the experimental results. |
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| Keywords: | HBT intrinsic stability stability factor small signal equivalent circuit model |
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