An asymmetrical sensing scheme for 1T1C FRAM to increase the sense margin |
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| Jia Ze, Zou Zhongren, Ren Tianling, Chen Hongyi. An asymmetrical sensing scheme for 1T1C FRAM to increase the sense margin[J]. Journal of Semiconductors, 2010, 31(11): 115001. doi: 10.1088/1674-4926/31/11/115001 Jia Z, Zou Z R, Ren T L, Chen H Y. An asymmetrical sensing scheme for 1T1C FRAM to increase the sense margin[J]. J. Semicond., 2010, 31(11): 115001. doi: 10.1088/1674-4926/31/11/115001.Export: BibTex EndNote |
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| Authors: | Jia Ze Zou Zhongren Ren Tianling Chen Hongyi |
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| Affiliation: | Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, China;Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, China;Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, China;Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, China |
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| Abstract: | A novel asymmetrical current-based sensing scheme for 1T1C FRAM is proposed, in which the two input transistors are not the same size and a feedback NMOS is added at the reference side of the sense amplifier. Compared with the conventional symmetrical scheme in Ref. [8], the proposed scheme increases the sense margin of the readout current by 53.9% and decreases the sensing power consumption by 14.1%, at the cost of an additional 7.89% area of the sensing scheme. An experimental FRAM prototype utilizing the proposed asymmetrical scheme is implemented in a 0.35μm three metal process, in which the function of the prototype is verified. |
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| Keywords: | FRAM sense margin current-based sense amplmer asymmetrical |
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