Lanthanum-Magnesium and Lanthanum-Manganese Donor-Acceptor-Codoped Semiconducting Barium Titanate |
| |
Authors: | Ching-Jui Ting Cheng-Jien Peng Hong-Yang Lu Shinn-Tyan Wu |
| |
Affiliation: | Materials Research Laboratories, Industrial Technology Research Institute, Chutung 31015, Taiwan, Republic of China |
| |
Abstract: | BaTiO3 powder doped with La donor and codoped with Mn or Mg acceptor was sintered at 1350°C/1 h in air. For Ladoped BaTiO3, the room-temperature resistivity decreased to a minimum at [La3+] ∼ 0.15 mol%. For La-Mn-codoped BaTiO3, the minimum resistivity occurred at [La3+] - 2[Mn2+] ∼ 0.15 mol%. When the ceramic was changed to a fine-grained insulator by high donor doping ([La3+] >0.15 mol%), its semiconductivity was restored, and the relatively homogeneous, coarse-grained microstructure recurred by codoping with either Mg or Mn acceptor, with the transition at [La3+] - 2[Mg2+] = 0.15 mol% or [La3+] - 2[Mn2+] = 0.15 mol%. The analogy of a compensation effect between La-Mn- and La-Mg-codoped BaTiO3 suggested that Mn acceptor added to BaTiO3 exists as Mn2+ ion in the bulk grain region; its influence on the positive temperature coefficient of resistivity behavior is then discussed. |
| |
Keywords: | barium titanate lanthanum magnesium semiconductors manganese |
|
|