轻掺杂漏(LDD)MOSFET的数值模拟

轻掺杂漏(LDD)MOSFET是一种已用在VLSI中的新型MOSFET结构.为了有效地进行LDD MOSFEI的优化设计,我们在二维数值模拟器MINIMOS的基础上,修改了边界条件及输入输出格式,考虑了轻掺杂区的杂质分布,研制成功了一种既适用于常规以MOSFET,又适用于LDD MOSFET的二维数值模拟程序FD-MINIMOS.应用该程序对LDD MOSFET的一系列直流特性模拟的结果表明,不同的轻掺杂浓度对于抑制沟道电场及热电子效应具有不同的效果,为轻掺杂区优化设计提供了重要信息.

Numerical Simulation of LDD MOSFET

Using simulator as an aided tool for LDD MOSFET disign, the cycle and cost can con-siderably be decreased.Based on the two dimensional simulator MINIMOS and consideringthe different boundary conditions,input/output format as well as the concentration distributionof the lightly doped region,a new program FD-MINIMOS which is not only suitable forconventional MOSFET but also for the LDD MOSFET is presented.The preformance of de-creasing the channel electric field and the substrate current for LDD MOSFET can be wellsimulated by using FD-MINIMOS.The results of simulation also indicate that different lightdoping concentration has different effect to refrain the channel electric field.