Long-wavelength emission from single InAs quantum dots layer grown on porous GaAs substrate |
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| Authors: | L Beji L Bouzaïene L Sfaxi H Ben Ouada |
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| Affiliation: | a Laboratoire de Physique et de Chimie des Interfaces, Faculté des Sciences, Bd de l'Environnement, 5019 Monastir, Tunisia
b Laboratoire de Physique des Semiconducteurs et des Composants Electronique, Faculté des Sciences, Bd de l'Environnement, 5019 Monastir, Tunisia |
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| Abstract: | In this paper, we present the growth and photoluminescence (PL) results of InAs quantum dots (QDs) on a p-type porous GaAs (001) substrate. It has been shown that critical layer thickness of InAs overgrowth on porous GaAs has been enhanced compared to that deposited on nominal GaAs. Using porous GaAs substrate, growth interruption and depositing 10 atomic monolayer (ML) In0.4Ga0.6As on InAs QDs, photoluminescence measured at 10 K exhibits an emission at 0.739 eV (∼1.67 μm) with an ultranarrow full width at half maximum (FWHM) of 16 meV. This emission represents the longer wavelength obtained up to date to our knowledge and has been attributed to the radiative transition in the InAs QDs. |
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| Keywords: | 68 55 Jk 82 45 +z 81 07 Vb 81 16 Dn 68 65 Ac 68 37 Lp |
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