平面平行真空微电子二极管中二分之三次方关系式的应用

在一定的假定条件下，考虑空间电荷影响，平面平行真空微电子（P—VMD）二极管中电流一电压近似按二分之三次方关系式工作。本文在此关系式及Forler—Nordheim场发射方程的基础上，通过解简化立方方程，进一步推导出管内的电位、电场强度、电子速度和空间电荷密度的分布函数。P-VMD二极管在保持管内结构与阴极表面电场强度不变，并工作在典型工作状态（归一化电位系数P=2／3）情况下，考虑空间电荷影响时的阳极电压、阳极电场强度和阳极电子速度分别比无空间电荷影响时增加约50．00％，73．21％和22．47％。P—VMD二极管内的空间电荷密度分布函数为正割函数，在阳极表面附近为最小，在阴极表面处为无穷大，这是由于本文假设在阴极表面处的电子初速度为零的缘故。

The Application of Ⅰ-Ⅴ Three-Halves Power Relationship to an Ideal Planar Parallel Vacuum Microelectronics Diode

Considering the influence of the space charge and certain hypothesis,the current-voltage equation inside an ideal planar parallel vacuum microelectronics(P-VME) diode is approximately equal to a three halves power relationship. On the basis of the three halves power equation and the Fowler-Nordheim field emission equation,the potential distribution function,the electric field distribution function,the electron velocity distribution function and the space charge density distribution function inside an ideal P-VME diode with a typical operating condition(normalized potential coefficient p=2/3) under considering the influence of the space charge have been further derived through solving the simplified cubic equation.From those equations we can see,the P-VME diode geometry and the field intensity on the surface of the FEA being fixed,the anode voltage,the anode electric field intensity and the anode electron velocity under considering the influence of the space charge when a typical operating condition(p=2/3) will increase about 50.0%,73.21% and 22.47% respectively than under those neglecting the influence of the space charge.The space charge density distribution function inside the P-VME diode is a secant function,it reached a minimum at near the surface of the anode,and is infinitely great on the surface of the cathode because we made an assumptions that the initial velocity of the emitted electrons from the surface of the cathode is zero.Above conclusions are only approximately right under the assumptions in this paper.