| 重掺杂P型Si1-xGex层中少数载流子浓度的低温特性 |
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| 引用本文： | 张万荣,李志国,孙英华,程尧海,陈建新,沈光地.重掺杂P型Si1-xGex层中少数载流子浓度的低温特性[J].微电子学,1999,29(5). |
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| 作者姓名： | 张万荣 李志国 孙英华 程尧海 陈建新 沈光地 |
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| 作者单位： | 北京工业大学,电子工程系,北京,100022 |
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| 基金项目： | 北京市自然科学基金! (4982 0 0 4 )，北京市科技新星计划基金 !(952 871 90 0 )，电子元器件可靠性国家实验室资助课题 !(990 30 4 0 1 ) |
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| 摘 要： | 考虑了重掺杂引起的禁带变窄效应,建立起少数载流子室温和低温模型,并进行了定量的计算。研究发现,p-Si1-xGex中的少子浓度(电子)随x的增加而增加。在重掺杂条件下,常温时,少子浓度随杂质浓度的上升而下降;而低温时,少子浓度却随杂质浓度的上升而上升。
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| 关 键 词： | 半导体材料 SiGe合金 低温特性 掺杂 |
Low Temperature Characteristics of Minor ity Carrier Concentration in Heavily Doped p-SiGe Layers |
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| ZHANG Wan-rong,LI Zhi-guo,SUN Ying-hua,CHENG Yao-hai,CHEN Jian-xin,SHEN Guang-di.Low Temperature Characteristics of Minor ity Carrier Concentration in Heavily Doped p-SiGe Layers[J].Microelectronics,1999,29(5). |
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| Authors: | ZHANG Wan-rong LI Zhi-guo SUN Ying-hua CHENG Yao-hai CHEN Jian-xin SHEN Guang-di |
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| Abstract: | Taking band gap narrowing effect resulting from heavy doping into consideration,calculative models for minority carrier(electron) concentration in p Si 1-x Ge x layers at room and low temperatures are presented It has been shown that the minority carrier increases with the Ge fraction in p Si 1-x Ge x layers Furthermore,it has been found that,for heavily doped SiGe layers,as the doping concentration increase,the minority carrier concentration decreases at room temperature,but increases at low temperatures |
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| Keywords: | Semiconductor material SiGe alloy Low temperature characteristics Doping |
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