一种高速、高共模噪声抗扰的电平位移电路

介绍了一种应用于GaN驱动的0.35μm HV CMOS工艺的高速、高共模噪声抗扰的电平位移电路。该电路采用高速电流镜和双锁存结构,并增加共模抗扰辅助电路,大大提高了传输速度和对共模噪声的抗扰能力。该高速、高共模噪声抗扰的电平位移电路主要用于驱动增强型GaN的高压半桥栅驱动。仿真结果显示该电平位移电路上升沿传输延时1.03 ns,下降沿传输延时1.15 ns,可承受GaN高压半桥栅驱动开关节点SW处电压浮动50 V/ns。

A High-Speed and High-Noise-Immunity Level Shifter for Gate Drive Circuit

A high-speed,high common-mode noise immunity level shifting circuit for a GaN-driver with 0.35μm HV CMOS process is proposed.The level shift circuit uses a high-speed current mirror and dual latch structure,which greatly increases the transmission speed.At the same time,the common mode anti-interference auxiliary circuit is added to the circuit,so the anti-interference ability of the level shift circuit to the common mode noise is improved.The high-speed,high common mode noise immunity level shift circuit is mainly used to drive the high-voltage half-bridge drive of the enhanced GaN.The simulation results show that the level shift circuit has a rising edge transmission delay of 1.03 ns and a falling edge transmission delay of 1.15 ns,which can withstand the GaN high-voltage half-bridge gate drive SW node voltage floating 50 V/ns.