| TCAD结合SPICE的单粒子效应仿真方法 |
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| 引用本文： | 周昕杰,陈瑶,花正勇,殷亚楠,郭刚,蔡丽.TCAD结合SPICE的单粒子效应仿真方法[J].电子与封装,2019,19(4):32-35,48. |
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| 作者姓名： | 周昕杰 陈瑶 花正勇 殷亚楠 郭刚 蔡丽 |
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| 作者单位： | 中国电子科技集团公司第五十八研究所,江苏无锡,214072;中国原子能科学研究院抗辐射应用技术创新中心,北京,102413 |
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| 摘 要： | 为解决传统集成电路抗单粒子加固设计中存在的不足,利用TCAD及SPICE软件,探索出一种单粒子效应仿真与电路抗辐射加固设计相结合的方法。该方法通过TCAD软件的器件建模、仿真单粒子效应对器件的影响,得出器件在单粒子辐射条件下的3个关键参数。利用SPICE软件将此参数转化为模拟单粒子效应的扰动源,进而指导电路抗单粒子效应的加固设计工作。通过对一款SRAM的加固设计及辐射试验对比,证明了该方法的正确性和有效性,同时也为以后单粒子效应设计加固提供了依据。
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| 关 键 词： | 辐射加固 单粒子效应 辐射效应仿真 |
The Technique of Single Event Effect Simulation Uses TCAD and SPICE |
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| ZHOU Xinjie,CHEN Yao,HUA Zhengyong,YIN Ya’nan,GUO Gang,CAI Li.The Technique of Single Event Effect Simulation Uses TCAD and SPICE[J].Electronics & Packaging,2019,19(4):32-35,48. |
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| Authors: | ZHOU Xinjie CHEN Yao HUA Zhengyong YIN Ya’nan GUO Gang CAI Li |
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| Affiliation: | (China Electronics Technology Group Corporation No.58 Research Institute, Wuxi 214072, China;Innovative Center of Radiation Hardening Applied Technology, China Institute of Atomic Energy, Beijing 102413, China) |
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| Abstract: | A technique of single event effect simulation was explored which bases TCAD and SPICE, for resolving the insufficiency of circuits radiation hardened in tradition design. This technique is modeling for device used TCAD, simulation the effect of Single Event Effect, then obtaining three key parameters in radiation environment. SPICE changed those parameters to disturbing signal of Single Event Effect. This way is for finding weak spots and guiding radiation hardened in circuit. This work is proved in a sram cell design. It supplies a well base for the design of radiation hardened circuits in future. |
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| Keywords: | radiation hardened single event effect radiation effect simulation |
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