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碲化铋表面化学镀镍工艺
引用本文:张林森,卢培浩,刘赟,宋延华,董会超.碲化铋表面化学镀镍工艺[J].电镀与涂饰,2011,30(12):26-28.
作者姓名:张林森  卢培浩  刘赟  宋延华  董会超
作者单位:1. 郑州轻工业学院材料与化学工程学院,河南省表界面重点实验室,河南郑州450002
2. 河南省质量工程职业学院,河南平顶山,467000
摘    要:采用化学镀镍的方法在半导体Bi2Te3表面实现金属化.镀液配方为:NiSO4·6H2O 25 ~ 30 g/L,NaH2PO2·H2O 20 ~ 30 g/L,CH3COONa 5 g/L,C6H5Na3O7·2H2O 5 g/L.讨论了工艺参数对镀层性能的影响,通过骤冷试验检测镍镀层与半导体之间的结合力,运用扫描电镜...

关 键 词:碲化铋  半导体  化学镀镍  金属化  结合力

Electroless nickel plating on surface of bismuth telluride
ZHANG Lin-sen,LU Pei-hao,LIU Yun,SONG Yan-hua,DONG Hui-chao.Electroless nickel plating on surface of bismuth telluride[J].Electroplating & Finishing,2011,30(12):26-28.
Authors:ZHANG Lin-sen  LU Pei-hao  LIU Yun  SONG Yan-hua  DONG Hui-chao
Affiliation:Key Lab of Surface & Interface Science of Henan Province,College of Material and Chemical Engineering,Zhengzhou University of Light Industry,Zhengzhou 450002,China
Abstract:The surface of Bi2Te3,a semi-conductor,was metallized by electroless nickel plating with a bath containing NiSO4.6H2O 25-30 g/L,NaH2PO2.H2O 20-30 g/L,CH3COONa 5 g/L,and C6H5Na3O7.2H2O 5 g/L.The effects of process parameters on deposit were discussed.The adhesion of deposit to semiconductor was examined by quenching test,and the morphology,composition and structure of the deposit were analyzed by scanning electron microscopy(SEM),energy-dispersive X-ray(EDXA) spectroscopy and X-ray diffraction(XRD).The results indicated that the nickel deposit obtained by plating at 80-85 °C for 10 min consists of Ni 90.94% and P 9.06%,has a uniform and compact surface,and is well adhered to the Bi2Te3 semiconductor.
Keywords:bismuth telluride  semiconductor  electroless nickel plating  metallization  adhesion strength
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