Electrical Spin Injection in a Ferromagnetic Metal/Insulator/Semiconductor Tunnel Heterostructure |
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Authors: | V F Motsnyi V I Safarov P van Dorpe J Das W van Roy E Goovaerts G Borghs and J De Boeck |
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Affiliation: | (1) IMEC, Kapeldreef 75, B-3001 Leuven, Belgium;(2) University of Antwerp-UIA, Universiteitsplein 1, B-2610 Antwerpen, Belgium;(3) GPEC, Case 901, Départment de Physique, Faculté des Sciences de Luminy, 13288 Marseille, France |
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Abstract: | We demonstrate experimentally the electrical spin injection from a ferromagnetic metal/tunnel barrier contact into a semiconductor III–V heterostructure. The injected electrons have an in-plane spin orientation. We show that by applying an oblique external magnetic field this spin orientation can be manipulated within the semiconductor, and a nonzero perpendicular spin component arises. This perpendicular component can be easily monitored by optical means (circular polarization of the emitted light). In a CoFe/AlO
x
/(Al,Ga)As/GaAs heterostructure we observe injected spin polarization in access of 9% at 80 K and optimized structures have recently shown spin injection up to room temperature. |
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Keywords: | spintronics spin-injection spin-LED emission of circular polarization oblique Hanle effect spin precession |
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