High field-effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material |
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Authors: | Gudjonsson G Olafsson HO Allerstam F Nilsson P-A Sveinbjornsson EO Zirath H Rodle T Jos R |
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Affiliation: | Dept. of Microtechnology & Nanoscience, Chalmers Univ. of Technol., Goteborg, Sweden; |
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Abstract: | We report investigations of Si face 4H-SiC MOSFETs with aluminum (Al) ion-implanted gate channels. High-quality SiO/sub 2/-SiC interfaces are obtained both when the gate oxide is grown on p-type epitaxial material and when grown on ion-implanted regions. A peak field-effect mobility of 170 cm/sup 2//V/spl middot/s is extracted from transistors with epitaxially grown channel region of doping 5/spl times/10/sup 15/ cm/sup -3/. Transistors with implanted gate channels with an Al concentration of 1/spl times/10/sup 17/ cm/sup -3/ exhibit peak field-effect mobility of 100 cm/sup 2//V/spl middot/s, while the mobility is 51 cm/sup 2//V/spl middot/s for an Al concentration of 5/spl times/10/sup 17/ cm/sup -3/. The mobility reduction with increasing acceptor density follows the same functional relationship as in n-channel Si MOSFETs. |
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