Van der Waals epitaxy and characterization of hexagonal boron nitride nanosheets on graphene |
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Authors: | Yangxi Song Changrui Zhang Bin Li Guqiao Ding Da Jiang Haomin Wang Xiaoming Xie |
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Affiliation: | 1.State Key Laboratory of Advanced Ceramic Fibers and Composites, College of Aerospace Science and Engineering, National University of Defense Technology, 109 Deya Road, Changsha 410073, People''s Republic of China;2.State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, People''s Republic of China |
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Abstract: | Graphene is highly sensitive to environmental influences, and thus, it is worthwhile to deposit protective layers on graphene without impairing its excellent properties. Hexagonal boron nitride (h-BN), a well-known dielectric material, may afford the necessary protection. In this research, we demonstrated the van der Waals epitaxy of h-BN nanosheets on mechanically exfoliated graphene by chemical vapor deposition, using borazine as the precursor to h-BN. The h-BN nanosheets had a triangular morphology on a narrow graphene belt but a polygonal morphology on a larger graphene film. The h-BN nanosheets on graphene were highly crystalline, except for various in-plane lattice orientations. Interestingly, the h-BN nanosheets preferred to grow on graphene than on SiO2/Si under the chosen experimental conditions, and this selective growth spoke of potential promise for application to the preparation of graphene/h-BN superlattice structures fabricated on SiO2/Si. |
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Keywords: | Hexagonal boron nitride Nanosheets Graphene van der Waals epitaxy Chemical vapor deposition |
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