Physical modeling of spiral inductors on silicon |
| |
Authors: | Yue C.P. Wong S.S. |
| |
Affiliation: | Center for Integrated Syst., Stanford Univ., CA ; |
| |
Abstract: | This paper presents a physical model for planar spiral inductors on silicon, which accounts for eddy current effect in the conductor, crossover capacitance between the spiral and center-tap, capacitance between the spiral and substrate, substrate ohmic loss, and substrate capacitance. The model has been confirmed with measured results of inductors having a wide range of layout and process parameters. This scalable inductor model enables the prediction and optimization of inductor performance |
| |
Keywords: | |
|
|