The effect of substrate temperature on P-CVD deposited a-SiGe : H films |
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| Authors: | Abduljabbar Rashad Jaydeep V. Sali B. R. Marathe M. G. Takwale A. D. Shaligram |
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| Affiliation: | a School of Energy Studies, Department of Physics, University of Pune, Ganeshkhind, Pune 411007, India;b Department of Electronic Science, University of Pune, Pune 411007, India |
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| Abstract: | Undoped a-SiGe : H films were deposited by the RF plasma chemical vapor deposition method. Films deposited at different substrate temperatures ranging between 100°C and 300°C were studied for their optoelectronic and structural properties. Structural defects like vacancies and microvoids were studied by positron lifetime spectroscopy (PLTS) at room temperature. Optoelectronic properties of the films were correlated with the PLTS measurements. The observations show a decrease in the deposition rate with substrate temperature. Good optoelectronic properties and proper structural relaxation have been obtained with a decrease in microvoid concentration. |
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| Keywords: | a-SiGe : H films Optoelectronic properties Structural properties |
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