Mn掺杂浓度对ZnO纳米薄膜的结构和光致发光的影响

Mn掺杂的ZnO基稀磁半导体材料由于具有独特的特性而受到人们广泛的关注。ZnO的激子束缚能高达60meV,具有优良的光学性质。因此,Mn掺杂的ZnO材料研究在磁性半导体领域广泛开展起来。文章采用溶胶-凝胶法制备了Mn掺杂的ZnO纳米晶,讨论了不同Mn含量对材料结构和光致发光的影响。XRD结果表明,所有的样品均具有六角纤锌矿结构,并且随着引入Mn含量的增加,样品的晶格常数增大。光致发光结果显示,随Mn含量的增加,样品的紫外发光峰先红移后蓝移。光致发光谱也显示,适量的Mn掺杂可以钝化样品的可见区发射,提高样品的光学质量。

Effects of Mn Content on Structure and Photoluminescence of ZnO Nanofilms

Mn-doped ZnO diluted magnetic semiconductor has attracted widely attention for its novel properties.ZnO is a wide band-gap semiconductor with the high exciton binding energy of 60 meV.The ZnO-based DMS therefore attracts extensive interesting.Mn-doped ZnO nanocrystallite thin films with different Mn content were synthesized by sol-gel method.Structural and optical characters were investigated using X-ray diffraction and photoluminescence spectroscopy.XRD spectra show all the films are hexagonal wurtzite structures and diffraction peaks shift to the big angle with the increasing Mn content.Room-temperature photoluminescence spectra show the ultraviolet emission shift to low-energy side then to high-energy side with the increasing Mn content,and the defect-related emissions were passivated by manganese oxide.