| 低温生长SiC薄膜衬底碳化研究 |
| |
| 引用本文： | 赵武,王雪文,张志勇,邓周虎,戴琨.低温生长SiC薄膜衬底碳化研究[J].电子元件与材料,2004,23(3):34-36. |
| |
| 作者姓名： | 赵武 王雪文 张志勇 邓周虎 戴琨 |
| |
| 作者单位： | 西北大学电子科学系,陕西,西安,710069;西北大学电子科学系,陕西,西安,710069;西北大学电子科学系,陕西,西安,710069;西北大学电子科学系,陕西,西安,710069;西北大学电子科学系,陕西,西安,710069 |
| |
| 基金项目： | 西北大学科研基金项目(98NW14E) |
| |
| 摘 要： | 讨论了在用热丝化学汽相沉积(HFCVD)法沿Si(111)晶面异质生长SiC薄膜的过程中衬底碳化工艺对SiC成膜的影响。利用扫描电子显微镜(SEM)、X射线衍射谱(XRD)、透射电子显微镜(TEM)和俄歇电子能谱(AES)等分析手段,对衬底碳化进行研究。并对典型工艺条件(钨丝温度2 000℃,衬底温度800℃,衬底碳化时间5 min)下制备的样品的碳化层进行分析,得出其厚度约为20 nm,由富C的3C-SiC层,3C-SiC层和含C的Si层组成。
|
| 关 键 词： | 碳化硅 薄膜 碳化 |
| 文章编号： | 1001-2028(2004)03-0034-03 |
Carbonization of Substrate for SiC Thin Film Growing at Lower Temperature |
| |
| ZHAO Wu,WANG Xue-wen,ZHANG Zhi-yong,DENG Zhou-hu,DAI Kun.Carbonization of Substrate for SiC Thin Film Growing at Lower Temperature[J].Electronic Components & Materials,2004,23(3):34-36. |
| |
| Authors: | ZHAO Wu WANG Xue-wen ZHANG Zhi-yong DENG Zhou-hu DAI Kun |
| |
| Abstract: | Discussed is the effect of the carbonization of the substrates on the growing of SiC/Si film on on-axis Si(111) substrates by hot filament chemical vapor deposition (HFCVD). The carbonization of the substrates was investigated by x-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and scanning auger microprobe (AES). A sample is analyzed, which is made under the typical conditions (hot filament 2 000℃, substrate 800℃, and carbonation time 5 minute). Its carbonated layer, 20 mm thick, consists of a 3C-SiC layer of rich-C, a 3C-SiC layer and a Si layer containing C element from the surface to the inside. |
| |
| Keywords: | silicon carbide thin film carbonization |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
