Damage buildup and the molecular effect in Si bombarded with PFn cluster ions |
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| Affiliation: | 1. Department of Physical Electronics, St. Petersburg State Polytechnical University, St. Petersburg 195251, Russian Federation;2. Research and Production Company Electron-Optronic, Morisa Toreza 68, St. Petersburg 194223, Russian Federation;3. Lawrence Livermore National Laboratory, Livermore, CA 94550, USA;1. Hahn-Meitner-Institüt and Technische Universität Berlin, Germany;2. Hahn-Meitner-Institüt Berlin, Germany;3. Hahn-Meitner-Institüt and Freie Universität Berlin, Germany |
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| Abstract: | We study the molecular effect (ME) in damage accumulation in Si bombarded at room temperature with atomic P and F and cluster PFn (n = 2 and 4) ions with an energy of 2.1 keV/amu. Correct ion irradiation conditions for unambiguous studies of the ME are discussed. Rutherford backscattering/channeling spectrometry results show that the damage buildup behavior strongly depends on the cluster ion size, and the ME efficiency increases rapidly with increasing the number of atoms in cluster ions. Moreover, the ME efficiency decreases with increasing the defect generation rate, indicating that dynamic annealing processes, rather than nonlinear energy spikes, play a major role in the ME for these irradiation conditions. |
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